issue 2 - september 2005 1 www.zetex.com ? zetex semiconductors plc 2005 zxtn2018f 60v, sot23, npn medium power transistor summary v (br)cev > 140v, v (br)ceo > 60v i c(cont) = 5a r ce(sat) = 25 m typical v ce(sat) < 45 mv @ 1a p d = 1.2w complementary part number : zxtp2027f description advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. the compact size and ratings of this device make it ideally suited to applications where space is at a premium. features ? higher power dissipation sot23 package high peak current low saturation voltage 140v forward blocking voltage applications mosfet and igbt gate driving motor drive relay, lamp and solenoid drive ordering information device marking 851 device reel size (inches) tape width (mm) quantity per reel ZXTN2018FTA 7 8 3,000 pinout - top view
zxtn2018f issue 2 - september 2005 2 www.zetex.com ? zetex semiconductors plc 2005 absolute maximum ratings thermal resistance parameter symbol limit unit collector-base voltage v cbo 140 v collector-emitter voltage v (br)cev 140 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 7v peak pulse current i cm 12 a continuous collector current (a) i c 5a base current i b 1a power dissipation @ t a =25 o c (a) linear derating factor p d 1.0 8.0 w mw/ o c power dissipation @ t a =25 o c (b) linear derating factor p d 1.2 9.6 w mw/ o c power dissipation @ t a =25 o c (c) linear derating factor p d 1.56 12.5 w mw/ o c operating and storage temperature t j :t stg -55 to +150 o c parameter symbol value unit junction to ambient (a) notes: (a) mounted on 18mm x 18mm x 1.6mm fr4 pcb with a very high coverage of 2 oz weight copper in still air conditions. r ja 125 o c/w junction to ambient (b) (b) mounted on 30mm x 30mm x 1.6mm fr4 pcb with a very high coverage of 2 oz weight copper in still air conditions. r ja 104 o c/w junction to ambient (c) (c) as (b) above measured at t<5secs. r ja 80 o c/w
zxtn2018f issue 2 - september 2005 3 www.zetex.com ? zetex semiconductors plc 2005 characteristics
zxtn2018f issue 2 - september 2005 4 www.zetex.com ? zetex semiconductors plc 2005 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage v (br)cbo 140 180 v i c =100 a collector-emitter breakdown voltage v (br)cev 140 180 v i c =1 a, -1v < v be < +0.3v collector-emitter breakdown voltage v (br)ceo 60 80 v i c =10ma (a) notes: (a) measured under pulsed conditions. pulse width=300 s. duty cycle 2%. emitter-base breakdown voltage v (br)ebo 78 v i e =100 a collector-emitter cut-off current i cev <1 20 na v ce =110v, v be = -1v collector-base cut-off current i cbo <1 20 na v cb =110v emitter-base cut-off current i ebo <1 10 na v eb =6v static forward current transfer ratio h fe 100 100 40 15 220 200 65 25 300 i c =10ma, v ce =1v (a) i c =2a, v ce =1v (a) i c =5a, v ce =1v (a) i c =10a, v ce =1v (a) collector-emitter saturation voltage v ce(sat) 15 35 40 85 145 170 30 45 55 110 170 210 mv mv mv mv mv mv i c =0.1a, i b =5ma (a) i c =1a, i b =100ma (a) i c =1a, i b =50ma (a) i c =2a, i b =50ma (a) i c =5a, i b =250ma (a) i c =6a, i b =300ma (a) base-emitter saturation voltage v be(sat) 0.92 1.00 v i c =5a, i b =250ma (a) base-emitter turn-on voltage v be(on) 0.85 0.95 v i c =5a, v ce =1v (a) transition frequency f t 130 mhz ic=100ma, v ce =10v, f=50mhz output capacitance c obo 28 pf v cb =10v, f=1mhz turn-on time t (on) 33 ns v cc =10v, i c =1a, turn-off time t (off) 668 ns i b1 =i b2 =100ma
zxtn2018f issue 2 - september 2005 5 www.zetex.com ? zetex semiconductors plc 2005 typical characteristics
zxtn2018f issue 2 - september 2005 6 www.zetex.com ? zetex semiconductors plc 2005 these offices are supported by agents and di stributors in major countries world-wide. this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com packaging details - sot23 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. max. max. a 2.67 3.05 0.105 0.120 h 0.33 0.51 0.013 0.020 b 1.20 1.40 0.047 0.055 k 0.01 0.10 0.0004 0.004 c - 1.10 - 0.043 l 2.10 2.50 0.083 0.0985 d 0.37 0.53 0.015 0.021 m 0.45 0.64 0.018 0.025 f 0.085 0.15 0.0034 0.0059 n 0.95 nom 0.0375 nom g 1.90 nom 0.075 nom - - - - - l n h g a c f b m k d 3 leads
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